Photoresist Systems (Table 1)
Irradiation Type
- Polymer Base (PB)
- Solvent (S)
- Developer (D)
- Ultraviolet
- Near (350 - 450 nm.)
- Negative
PB - Azide Base - aliphatic rubber (isoprene)
S - n-butyl acetate, xylene, cellosolve acetate, ethyl benzene
D - xylene, aliphatic hydrocarbons, n-butyl acetate, cellosolve acetate, stoddard solvent (petroleum distellates) - Positive
PB - ortho-diazoketone
S - cellosolve acetate, n-butyl acetate, xylene, chlorotoluene
D - sodium hydroxide, silicates, potassium hydroxide
- Negative
- Deep (2000- 250 nm.)
Primarily positive resists
- Near (350 - 450 nm.)
- Electron-Beam (∼ 100 nm.)
- Negative
PB - copolymer-ethyl acrylate and glycidylmethacrylate (COP)
S - n/a
D - n/a - Positive
PB - polymethylmethacrylate, polyfluoralkylmethacrylate, polyalkylaldehyde, poly-cyano ethylacrylate
S - n/a
D - alkaline or isopropyl alcohol (IPA), ethyl acetate, or methyl isobutyl ketone (MIBK)
- Negative
- X-ray (0.5 - 5 nm.)
- Negative
PB - co-polymer-ethyl acrylate and glycidyl methacrylate (COP)
S - n/a
D - n/a - Positive
PB - polymethylmethacrylate, ortho-diazoketone, poly (hexafluorobutylmethacrylate), poly (butene - 1 - sulfone)
S - n/a
D - n/a
- Negative